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| STB40NE03L-20 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID s s s s s TYPICAL RDS(on) = 0.014 EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS s D2PAK TO-263 (suffix "T4") INTERNAL SCHEMATIC DIAGRAM Symbol V DS V DGR V GS ID ID I DM (*) Ptot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor o o Value 30 30 15 40 28 160 80 0.53 7 -65 to 175 175 (1) ISD 40 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/ o C V/ns o o dv/dt(1) T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature C C (*) Pulse width limited by safe operating area November 1997 1/8 STB40NE03L-20 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.88 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 15V) Max Value 40 200 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = 15 V T c = 125 I GSS ON () Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS Test Conditions ID = 250 A Min. 1 Typ. 1.8 0.014 40 Max. 2.5 0.02 0.023 Unit V A V GS = 10V I D = 20 A V GS = 5V I D = 20 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 20 A V GS = 0 Min. 15 Typ. 20 1850 450 160 2400 590 210 Max. Unit S pF pF pF 2/8 STB40NE03L-20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V R G =4.7 V DD = 24 V I D = 20 A V GS = 5 V I D = 40 A VGS = 5 V Min. Typ. 25 160 29 12 14 Max. 33 210 38 Unit ns ns nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V R G =4.7 I D = 40 A V GS = 5 V Min. Typ. 25 120 155 Max. 33 160 210 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A I SD = 40 A V DD = 20 V VGS = 0 di/dt = 100 A/s o T j = 150 C 50 0.9 3.5 Test Conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB40NE03L-20 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB40NE03L-20 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB40NE03L-20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB40NE03L-20 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 7/8 STB40NE03L-20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 8/8 |
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